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savantic semiconductor product specification silicon pnp power transistors 2SA1598 d escription with ito-220 package switching power transistor low collector saturation voltage pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -40 v v ebo emitter-base voltage open collector -7 v i c collector current -7 a i cm collector current-peak -14 a i b base current -1.5 a i bm base current-peak -2 a p t total power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction case 5.0 /w fig.1 simplified outline (ito-220) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1598 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-0.1a ;i b =0 -40 v v cesat collector-emitter saturation voltage i c =-3.5a; i b =-0.2a -0.3 v v besat base-emitter saturation voltage i c =-3.5a; i b =-0.2a -1.2 v i cbo i ceo collector cut-off current at rated volatge -0.1 ma i ebo emitter cut-off current at rated volatge -0.1 ma h fe dc current gain i c =-3.5a ; v ce =-2v 70 f t transition frequency i c =-0.7a ; v ce =-10v 50 mhz switching times t on turn-on time 0.3 s t s storage time 1.5 s t f fall time i c =-3.5a;i b1 =-i b2 =-0.35a , r l =8 c ;v bb2 =-4v 0.5 s
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1598 package outline fig.2 outline dimensions (unindicated tolerance:0.20 mm)

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